- Homray Material Technology
-
Suzhou, Jiangsu, China
- Main products: GaN Substrate Manufacturers, GaN Wafer Suppliers, GaN-On-Sapphire Wafer Manufacturers, SiC Substrate Manufacturers, SiC Wafer Suppliers, GaN-On-Si Epi Wafer Suppliers, GaN-On-SiC Epi Wafer Suppliers, GaN-On-Silicon Epi Wafer Suppliers
Home > Products > Silicon Carbide Wafer > 2 inch 1100um Raw cut SiC Substrate Manufacturer no lapping
2 inch 1100um Raw cut SiC Substrate Manufacturer no lapping
- SHANGHAI
- T/T
- 30 days
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Product Details
| Brand Name | HMT | Place of Origin | China | |
| Model Number | 2inch |
Product Description
2 inch 1100um Raw cut SiC Substrate Manufacturer no lapping
HMT supply 4H-N Conductive type of 2 inch Raw cut SiC wafer with thickness 1100um. The diameter of 2 inch is 50.8mm. We support customized differenct thickness for As-cut SiC wafers. What's As-cut wafer? It means SiC wafer slicing from SiC boule and without grinding and polishing process. Customers can test their grinding or lapping equipment etc.
SiC with high voltage resistance, high temperature resistance, high frequency, radiation resistance and other excellent electrical characteristics, breaking through the physical limitations of silicon based semiconductor materials, is the third generation of semiconductor core materials. SiC materials can be made into SiC based gallium nitride radio frequency devices and SiC power devices. Benefiting from the development of 5G communications, national defense, new energy vehicles and new energy photovoltaic, SiC demand is growing at a considerable rate.
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
| Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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