Home > Products > Silicon Carbide Wafer > 8 inch SiC Wafer Manufacturer 4H-SiC
8 inch SiC Wafer Manufacturer 4H-SiC
- SHANGHAI
- T/T
- 30 days
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Product Details
Brand Name | HMT | Place of Origin | China | |
Model Number | 8 inch |
Product Description
HMT company can provide 200mm 8inch SiC Wafer with dummy grade and production grade. The 8 inch SiC wafer is the largest dimension of SiC Substrate in the world, so the price is much higher than 6 inch. But HMT will provide you bottom price for 8 inch Silicon Carbide SiC Substrate Wafer so that help customers cost down. Do not hesitate, contact us today!
Basic Parameters
Dimension: 8 inch SiC Wafer
Thickness: 500um
Dopant: Conductive N nitrogen
Resistivity: 0.01-0.03ohm.cm
Orientation: off axis 4.0 toward<1120>±0.15°
Grade: D grade R grade P grade
MPD: Different grade has different MPD parameters
Surface: Si face CMP C face polished
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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