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HEMT GaN On SiC For Power Wafer Manufacturers
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- T/T
- 30 days
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Product Details
Brand Name | HMT | Place of Origin | China | |
Model Number | 4 inch |
Product Description
HMT, a Chinese GaN Epi Wafer Manufacturer, supply 4-inch and 6-inch GaN-on-SiC Epi Wafer for Power HEMT , ,high-power RF devices for 5G and industrial applications. We always offer high quality but preferential GaN Epi Wafers to worldwide semiconductor companies, research labs, universities.
5G mmWave Power Amplifiers: GaN-on-SiC enables higher efficiency and linearity in 5G base stations.
Satellite & Radar Systems: Used in X-band and Ka-band phased arrays for military and aerospace.
Traction Inverters: GaN-on-SiC reduces weight and improves efficiency in 800V EV systems.
Onboard Chargers (OBCs): Enables faster switching and compact designs.
Electronic Warfare (EW) Systems: High-power RF amplifiers for jamming and radar.
Drone & UAV Radars: Lightweight, high-efficiency MMICs for surveillance drones
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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