- Homray Material Technology
-
Suzhou, Jiangsu, China
- Main products: GaN Substrate Manufacturers, GaN Wafer Suppliers, GaN-On-Sapphire Wafer Manufacturers, SiC Substrate Manufacturers, SiC Wafer Suppliers, GaN-On-Si Epi Wafer Suppliers, GaN-On-SiC Epi Wafer Suppliers, GaN-On-Silicon Epi Wafer Suppliers
Home > Products > Silicon Carbide Wafer > Silicon Carbide Epitaxial Wafer Manufacturer
Silicon Carbide Epitaxial Wafer Manufacturer
Negotiable
/ Piece
3 Pieces(Min. Order)
- T/T
- 30 days
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Product Details
| Brand Name | Homray Material Technology | Place of Origin | China | |
| Model Number | 4inch |
Product Description
Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.
Item | SiC N-Type Epi Wafer | SiC P-Type Epi Wafer |
Size | 3inch/ 4inch/ 6inch | 3inch/ 4inch/ 6inch |
Poly-type | 4H | 4H |
Dopant | Nitrogen | Aluminum |
Doping Density | ND-NA | NA-ND |
Silicon Surface | 9E14~1E19cm-3 | 9E14~1E19cm-3 |
Tolerance | ±15% | ±50% |
Uniformity | ≤10% | ≤20% |
Thickness | 0.2~50μm | |
Tolerance | ±10% | ±10% |
Uniformity | ≤10% | ≤10% |
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
| Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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