GaN Substrate GaN Epi Wafer Manufacturer for HEMT

The HMTRF product is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) high resistance Si-wafer for RF power applications. SPS offers two standard HEMT structures: one having an Al0.25Ga0.75N barrier without  an AlN spacer layer and the other one having an Al0.25Ga0.75N barrier with an AlN spacer layer. Custom barrier, cap layer and in-situ SiN designs are available upon request

Homray Material as the leading manufacturer and supplier of Gallium Nitride(GaN)Epi wafer, GaN substrate wafer, Silicon Carbide (SiC) Epi wafer, SiC substrate wafer for the wide bandgap semiconductor; Dummy Grade Silicon Wafer, Test Grade Silicon Wafer, We can produce wide range of Compound Semiconductor Wafer and LED Wafer Substrate including Nitride  Semiconductor: 2 inch, 4 inch GaN Templates, 2inch Free-Standing GaN Substrates, Semi-insulating GaN Substrates; Carbide Semiconductor: SiC Conductive Substrates , SiC Epitaxial Wafer so as to meet our various customer's requests, including researching grade, dummy and foundry grade.

.