- Homray Material Technology
-
Suzhou, Jiangsu, China
- Main products: GaN Substrate Manufacturers, GaN Wafer Suppliers, GaN-On-Sapphire Wafer Manufacturers, SiC Substrate Manufacturers, SiC Wafer Suppliers, GaN-On-Si Epi Wafer Suppliers, GaN-On-SiC Epi Wafer Suppliers, GaN-On-Silicon Epi Wafer Suppliers
Home > Products > Gallium Nitride > GaN HEMT on Si Epi Wafer Manufacturer For RF
GaN HEMT on Si Epi Wafer Manufacturer For RF
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Product Details
| Brand Name | HMT | Place of Origin | China | |
| Model Number | 4 inch |
Product Description
GaN HEMT on Si Epi Wafer Manufacturer For RF
HMT produce and supply 100mm,150mm and 200mm diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.
Homray Material Technology provides high-performance and high-quality GaN HEMT epitaxial wafers with:
High epi-layer uniformity
High breakdown voltage and low leakage current
Excellent two-dimensional electron gas（２DEG）properties
Low RF loss achieved by optimized interlayer growth techniques
Clean surface with minimal particles, leading to high device production yields.
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
| Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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