- Homray Material Technology
-
Suzhou, Jiangsu, China
- Main products: GaN Substrate Manufacturers, GaN Wafer Suppliers, GaN-On-Sapphire Wafer Manufacturers, SiC Substrate Manufacturers, SiC Wafer Suppliers, GaN-On-Si Epi Wafer Suppliers, GaN-On-SiC Epi Wafer Suppliers, GaN-On-Silicon Epi Wafer Suppliers
Home > Products > Silicon Carbide Wafer > SiC Wafer Manufacturer For Power Device Application
SiC Wafer Manufacturer For Power Device Application
- SHANGHAI
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Product Details
| Brand Name | HMT | Place of Origin | China | |
| Model Number | 4 inch 8 inch |
Product Description
SiC Wafer Manufacturer For Power Device Application
Import SiC wafer from China Manufacturer and Supplier can select HMT company, we are the professional SiC Wafer Manufacturer with many years experiences for SiC wafer produce. We supply SiC Wafer, As cut SiC Wafer and Single Crystal SiC Boule including 2 inch 4 inch 6 inch and largest 8 inch to worldwide clients. we always provide competitive price but high quality SiC wafer to clients. They are willing to cooperate with us cause we are a reliable SiC Wafer Supplier.
The breakdown fields of GaN and SiC are relatively similar, with a breakdown field of 3.3 MV/cm for gallium nitride and 3.5 MV/cm for SiC. These breakdown fields allow the compound to handle significantly higher voltages better than ordinary silicon. The breakdown field of silicon is 0.3 MV/cm, which means that the ability of gallium nitride and SiC to maintain a higher voltage is almost ten times greater. They are also able to support lower voltages using significantly smaller devices.
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
| Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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