- Homray Material Technology
-
Suzhou, Jiangsu, China
- Main products: GaN Substrate Manufacturers, GaN Wafer Suppliers, GaN-On-Sapphire Wafer Manufacturers, SiC Substrate Manufacturers, SiC Wafer Suppliers, GaN-On-Si Epi Wafer Suppliers, GaN-On-SiC Epi Wafer Suppliers, GaN-On-Silicon Epi Wafer Suppliers
Home > Products > Gallium Nitride > 200mm D-HEMT on Si Epi wafer manufacturer LV
200mm D-HEMT on Si Epi wafer manufacturer LV
Negotiable
/ Piece
10 Pieces(Min. Order)
- SHANGHAI
- T/T
- 30 days
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Product Details
| Brand Name | hmt | Place of Origin | China | |
| Model Number | 8 inch |
Product Description
200mm D-HEMT on Si Epi wafer manufacturer LV
HMT company provide 200mm 8inch D-mode and E-mode GaN on Si Epitaxy wafer for power HEMT applications. We use high quality Si substrate with 1000um thickness.
The GaN on Si epi wafer manufactured by Homray Material Technology, can be used in 650V electronic electric HEMT and RF RF high electron mobility transistors. At present, our GaN on Si epi wafer structure can be divided into D-MODE depletion HMET structure, E-MODE enhanced HEMT structure, and RF HEMT structure. Some structural parameters can be customized according to customers' design requirements.
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
| Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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