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Indium Semiconductor Operate Lasers Photodiodes And Waveguides Fabricated
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Product Details
| Brand Name | DXT/OEM | Place of Origin | China | |
| Model Number | two-, three- and four-inch |
Product Description
Certification:CAS / ISO9001/ SGS
Lasers Photodiodes And Waveguides Fabricated On InP Operate At The Optimum Transmission Window Of Glass Fiber
Indium Phosphide (InP) is a key semiconductor material that enables optical systems to deliver the performance required for data center, mobile backhaul, metro and long-haul applications. Lasers, photodiodes and waveguides fabricated on InP operate at the optimum transmission window of glass fiber, which enable efficient fiber communications.
Indium Phosphide wafers 2" and 3" available in Test and Prime grades. Custom orders always accepted.
Uses:
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors sillicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction transistor that could operate at 604 GHz.
It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Chemical Properties
The chemical properties of indium phosphide are provided in the table below:
| Chemical Properties | |||
| Chemical Formula | InP | ||
| Molecular Weight | 145.792 g/mol | ||
| CAS No. | 22398-80-7 | ||
| IUPAC Name | Indium phosphide | ||
| Group | III-V | ||
| Band Gap | 1.344 eV | ||
| Band Gap Type | Direct | ||
| Crystal Structure | Zinc Blende | ||
| Symmetry Group | Td2-F43m | ||
| Lattice Constant | 5.8687 Angstroms | ||
| InP Single Chip Parameters(VGF Crystal Growth Process Technology) | ||||||
| ? | ? | ? | ? | ? | ? | |
| Item | Diameter (inch) | Type | Carrier Concentration (cm-3) | Electron Mobility (cm2/V.s) | Resistivity (Ω.m) | Dislocation Density (cm-2) |
| InP | 2 | N | ≤1×1018 | (3.5-4)×103 | ＜1×103 | |
| S-InP | 2 | N | (0.5-1)×1018 | (2-4)×103 | ＜500 | |
| 3 | (0.5-1)×1018 | (2-4)×103 | ＜1×103 | |||
| 4 | (0.5-1)×1018 | (2-4)×103 | ＜2×103 | |||
| Zn-InP | 2/3/4 | P | (0.5-1)×1018 | 50-70 | ＜1×103 | |
| Fe-InP | 2 | SI | ＞2000 | ＞0.5×107 | ＜2.5×103 | |
| 3 | ||||||
| 4 | ||||||
| Single-side and double-side polishing, epiready. Crystal orientation(100). Standard thickness for two-inch chip is 350±25μm,three-inch chip is 600±25μm and four-inch chip is 625±25μm,others depend on different processing requirements. | ||||||
Contact Us
- Shenzhen Foms Fiber Company Limited
- Contact nameMs. Shanna Chat Now
- Phone86-755-29834576
- AddressRm1483-1484, Block B, Qinghu T-park, Qingxiang Rd, Qinghu Community,Longhua New district, Xianyang, Shaanxi
Product Categories
| Fiber Optic Adapter | Fiber Optic Terminal Box | Fiber Optical Connector | Indium Phosphide Wafers |
| Optical Fiber Patch Cord | Optical Fiber Pigtail |
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