Laser Photodiodes Indium Phosphide Wafers Single or Double Side Polished

FOB Price

Negotiable / Set

1 Set(Min. Order)

Payment TermsT/T L/C D/P D/A
Delivery Detail7 days

Request Sample Customized Request Request Free Catalogs

Contact Now

Get lowest price

Product Details

Brand Name	DXT/OEM		Place of Origin	China
Model Number	two-, three- and four-inch

Product Description

Delivery Time:in 30 days
Certification:CAS / ISO9001/ SGS
DXT manufactures and sells InP single crystal wafers for the use in telecommunications and microelectronics fields: - For fiber optics network components including DWDM lasers, VCSELs, pump lasers, PIN and APD diodes, amplifiers...

- For high speed electronics circuit using HBT, HEMT for fiber optics, wireless and space communication and automotive applications.

Technology:

EPICLEAN enables InPACT to produce substrates with superior epi-ready surface cleanliness which leads to purer substrate-epilayer interface by up to one order of magnitude as proven by a number of MOCVD and CAS groups.

- lowest contamination before (on the substrate epi-ready surface) and after epitaxy (substrate-epilayer interface).

- Mechanically cleaved (distinguished from natural cleave) major flat with accuracy up to 0.02°

Key Advantages:

InP wafers are available with diameters up to 4 inches, leading to a large number of devices obtained from each wafer.

25Gbps+ data rates are possible with directly modulated lasers based on InP wafers.

A large variety of semiconductor crystals can be deposited on an InP wafer, allowing fabrication of highly reliable devices over wide temperatures. InP’s low refractive index enables its use as the cladding for laser waveguides. InP is a direct bandgap material that enables the fabrication of single or integrated devices that absorb or emit at 1310 and 1550 nm, the two optimum wavelengths in the optical spectrum for fiber communications. InP is the preferred material to build laser sources for emerging silicon photonics products.

InP Single Chip Parameters(VGF Crystal Growth Process Technology)
?	?	?	?	?	?
Item	Diameter (inch)	Type	Carrier Concentration (cm-3)	Electron Mobility (cm2/V.s)	Resistivity (Ω.m)	Dislocation Density (cm-2)
InP	2	N	≤1×1018	(3.5-4)×103		＜1×103
S-InP	2	N	(0.5-1)×1018	(2-4)×103		＜500
	3		(0.5-1)×1018	(2-4)×103		＜1×103
	4		(0.5-1)×1018	(2-4)×103		＜2×103
Zn-InP	2/3/4	P	(0.5-1)×1018	50-70		＜1×103
Fe-InP	2	SI		＞2000	＞0.5×107	＜2.5×103
	3
	4
Single-side and double-side polishing, epiready. Crystal orientation(100). Standard thickness for two-inch chip is 350±25μm,three-inch chip is 600±25μm and four-inch chip is 625±25μm,others depend on different processing requirements.

Contact Us

Shenzhen Foms Fiber Company Limited: Contact nameMs. Shanna
Chat Now; Phone86-755-29834576; AddressRm1483-1484, Block B, Qinghu T-park, Qingxiang Rd, Qinghu Community,Longhua New district, Xianyang, Shaanxi

*Email
Please enter Your valid email address.
*To

Ms. Shanna
*Message
Your inquiry content must be between 20 to 5000 characters.
Please enter a correct verification code.

Product Categories

Fiber Optic Adapter	Fiber Optic Terminal Box	Fiber Optical Connector	Indium Phosphide Wafers
Optical Fiber Patch Cord	Optical Fiber Pigtail

Laser Photodiodes Indium Phosphide Wafers Single or Double Side Polished

You May Like

Product Details

Product Description

Contact Us

Product Categories

New Products

Popular Searches

Recommended Products

Find Similar Products By Category