3 inches 4H SiC single crystal Wafer

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Negotiable / Piece

100 Pieces(Min. Order)

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Product Details

Place of Origin

Beijing, China

Model Number

SiC

Product Description

3 inches 4H SiC single crystal Wafer

We provide high quality SiC wafer( Silicon Carbide ) to electronic and optoelectronic

industry . SiC wafer is a next generation semiconductor material , with unique electrical

propertiesand excellent thermal properties , compared to silicon wafer and gallium
arsenide wafer , SiC is more suitable for high temperature and high power
device .SiC wafer can be supplied in diameter 2 inch , both 4-H or 6-H
polytype N-type , Nitrogent doped , and Si face polished .

Please contact us for more information

FEATURES

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

Applications:

• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes

SPECIFICATION

Contact Us

Yongkang Xianghai Weighing Instruments Factory: Contact nameClaire Chen
Chat Now; Phone0086-579-18258979700; AddressNo. 5, Xilushanbei, Gushan Town

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3 inches 4H SiC single crystal Wafer

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