ABB IGBT Module 5SHX0360D0001 Gate Commutated Thyristor
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Product Details
Material | Other, Global universal model | Condition | Other, Global universal model | |
Task | Other, Global universal model | Mathematical Model | Other, Global universal model | |
Signal | Other, Global universal model | Customized | Non-Customized | |
Structure | Other, Global universal model | Rated Voltage | 2600V | |
Current | 2645A | Operating Temperature | -40℃ to +85℃ |
Product Description
ABB 5SHY3545L0010 3BHE009681R0101 High-Voltage Thyristor Module
ABB 5SHX0360D0001 is a high-performance Integrated Gate-Commutated Thyristor (IGCT) module, belonging to the ABB 5SHX series. It is specifically designed to handle harsh high-power application scenarios, skillfully integrating the strong large-current carrying capacity of thyristors with the fast switching characteristics of transistors, and plays a key role in the field of power electronics. This module is widely used in various industries such as industrial automation, power systems, machinery manufacturing, metallurgy, mining, and transportation. In industrial automation, it is often used in links such as motor control and lighting control; in power systems, it mainly undertakes the task of reactive power compensation to improve the operating efficiency and stability of power systems; in high-voltage distribution systems, as a core component, it provides overcurrent, short-circuit, and ground fault protection for the system, and is an important equipment to ensure stable power supply.
Structurally, 5SHX0360D0001 integrates a GTO chip, an anti-parallel diode, and a gate drive circuit, and is connected to the gate driver externally in a low-inductance manner. When the module is in the on-state, its operation mode is similar to that of a thyristor, realizing efficient transmission of large currents through a positive feedback mechanism, showing the characteristics of strong current-carrying capacity and low on-state voltage drop. In the turn-off process, the pn junction between the IGCT gate and cathode is turned into reverse bias in advance and exits operation, and the entire device switches to the transistor operating mode. Specifically, by turning on the switch in series with the cathode (usually a MOSFET), the P-base n-emitter is reverse-biased, thereby quickly stopping the cathode injection, and forcing the anode current to be converted into the gate current in a short time (usually within 1μs). As a result, the GTO is transformed into a PNP transistor with a non-contact base region, eliminating the cathode emitter shrinkage effect, making the maximum turn-off current far exceed the rated current of traditional GTOs. Moreover, since the IGCT turns off when the gain is close to 1, the protective snubber circuit can be omitted.
Company Profile

Main products: Covering globally renowned brands: Bently Nevada, Triconex, Woodward, Foxboro, Westinghouse, Reliance, Schneider Modicon, ABB, AB (Allen-Bradley), Motorola, GE Fanuc, Yaskawa, Bosch Rexroth Rexroth, ACSO, YOKOGAWA, Rexroth, NI, ICS Triplex, Kollmorgen, Mitsubishi, MOOG, Emerson, B&R B&r, SST, ALSTOM, KUKA EPRO, LAM HIMA dark Horse, HONEYWELL, prosoft, AMAT, SIEMENS, etc. The product categories include: DCS system accessories, robot system spare parts, large servo system spare parts, etc., which are widely used in power, chemical, metallurgy, intelligent manufacturing and other fields.
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- Guizhou Yuanmiao Automation Equipment Co., Ltd.
- Contact nameyezi Chat Now
- AddressXixiu District, Anshun, Guizhou
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