ABB 5SHY4045L0006 3BHB030310R0001 IGCT Module

ABB 5SHY4045L0006Product Type

Product Features

• High performance, low cost, low noise, and smooth operation.

• 16 levels of equal-angle constant torque subdivision, with a maximum resolution of 60,000 steps/revolution.

• Unique control circuit reduces noise and enhances rotational stability, with a maximum response frequency of 200 Kpps.

• When the step pulse stops for more than 100 ms, the coil current automatically decreases to 20%–80%.

• Adopts bipolar constant current chopping to enable the same motor to output higher speed and power.

• Optocoupler isolated signal input/output, with 16-level adjustable drive current from 0.6A/phase to 4.2A/phase.

• Single power supply input with an AC voltage range of 110–220V, featuring overheat, overcurrent, and undervoltage protection.

• Dimensions: 178x108.5x68 mm3, net weight: 1.25 kg, with phase memory function.

ABB 3BHB030310R0001Product Type

Main Features

• Adopts IGCT technology, combining the low on-state loss of thyristors with the fast turn-off capability of transistors.

• Supports a rated current of 45A and a high-voltage environment of 4500V, adapting to different load requirements.

• Switching response time as short as microseconds, suitable for high-frequency dynamic load control.

• Optional protection classes IP20/IP54, withstanding temperature ranges from -40°C to +70°C and high-vibration environments to ensure long-term stable operation.

• Built-in overcurrent, overtemperature, and short-circuit protection mechanisms to monitor equipment status in real time and prevent abnormal damage.

Application Fields

Technical ParametersElectrical Parameters

• Rated current: 45A

• Operating voltage: 4500V DC

Dynamic Performance Parameters

• Response time: ≤10μs

Mechanical and Environmental Parameters

• Protection class: IP20/IP54 (optional)

• Operating temperature: -40°C to +70°C

• Dimensions: 24.5×14.5×3.2 cm or 20×15×10 cm (differences may exist from different sources)

Communication Interfaces

Protection Functions

IGBT Switching Principle1. Conduction State (On)

• Drive signal input: When a +15V drive voltage is applied to the gate (G) relative to the emitter (E), and the voltage exceeds the threshold voltage (Vth, approximately 4–5V), a conductive channel (N-type inversion layer) is formed below the oxide insulating layer.

• Carrier injection: After the channel is connected, the PN junction between the collector (C) and emitter (E) is forward-biased. The P-type substrate injects holes (minority carriers) into the N-drift region, while the N+ emitter injects electrons (majority carriers), forming bipolar conduction, and the IGBT conducts.

• Current flow: The collector current (Ic) passes through the N-drift region and channel to the emitter. The conduction voltage drop (Vce(sat)) is determined by materials and structure (e.g., typical value of 5SHY4045L0006 ≤2.3V).

2. Cut-off State (Off)

• Drive signal removal: The gate voltage drops to -5V (or 0V), the channel disappears, and the minority carriers (holes) in the N-drift region need to be exhausted through recombination or extraction.

• Turn-off process: The IGBT remains conductive until the carriers are completely exhausted, and the high-resistance state is restored between the collector and emitter, blocking the voltage (Vces=4500V).

• Diode freewheeling: When the IGBT is turned off, if the load is inductive, the anti-parallel diode automatically conducts to avoid overvoltage breakdown (e.g., in motor drives and converter scenarios).