- Shenzhen Kexinxin Technology Co., Ltd.
-
Shenzhen, Guangdong, China
- Main products: Integrated Circuits, Tantalum Capacitor, Mosfet, Crystal, Diodes
IPW60R099C7XKSA1 Infineon Technologies MOSFET HIGH POWER_NEW
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Product Details
| Brand Name | Infineon Technologies | Place of Origin | China | |
| Model Number | IPW60R099C7XKSA1 | Type | Other, MOSFET | |
| Package Type | Surface Mount |
Product Description
Factory
Mfr. #:
IPW60R099C7XKSA1
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 22 A
Rds On - Drain-Source Resistance: 85 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 110 W
Channel Mode: Enhancement
Tradename: CoolMOS
Series: CoolMOS C7
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 4.5 ns
Height: 21.1 mm
Length: 16.13 mm
Product Type: MOSFET
Rise Time: 8 ns
factory pack quantity: 240
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 54 ns
Typical Turn-On Delay Time: 11.8 ns
Width: 5.21 mm
Part # Aliases: IPW60R099C7 SP001298004
Unit Weight: 0.211644 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- AddressFutian, Shenzhen, Guangdong
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