DMN1008UFDF-7 Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V
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Product Details
Brand Name | Diodes | Place of Origin | China | |
Model Number | DMN1008UFDF-7 | Type | Other, MOSFET | |
Package Type | Surface Mount |
Product Description
Factory
DMN1008UFDF-7
Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: U-DFN2020-6
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 12 V
Id - Continuous Drain Current: 12.2 A
Rds On - Drain-Source Resistance: 6.6 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 300 mV
Qg - Gate Charge: 13.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.7 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: kxxReel
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 7.5 ns
Product Type: MOSFET
Rise Time: 6.6 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 17.5 ns
Typical Turn-On Delay Time: 3.5 ns
Unit Weight: 0.002293 oz
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