- Shenzhen Kexinxin Technology Co., Ltd.
-
Shenzhen, Guangdong, China
- Main products: Integrated Circuits, Tantalum Capacitor, Mosfet, Crystal, Diodes
Home > Products > MOSFET > BSC070N10NS3 G Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
BSC070N10NS3 G Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
- 2147483647 Piece / Pieces per Month
- Shenzhen
- T/T L/C D/P D/A Credit Card PayPal Cash
You May Like
-
BT136S-600D,118 WeEn Semiconductors Triacs TAPE13 TRIAC
-
BTB12-800CWRG STMicroelectronics Triacs 12 Amp 800 Volt
-
BY25D40ASTIG(T) 4/2M BIT SPI NOR FLASH Boya Microelectronics Memory Series
-
BYV26EGP-E3/73 Vishay General Semiconductor Rectifiers 1000 Volt 1.0A 75ns Glass Passivated
-
BZT52C5V6S SOD-323 Plastic-Encapsulate Diodes JSCJ
-
BZX55C75-TR Vishay Semiconductors Zener Diodes 75 Volt 0.5W 5%
Product Details
| Brand Name | Infineon Technologies | Place of Origin | China | |
| Model Number | BSC070N10NS3 G | Type | Other, MOSFET | |
| Package Type | Surface Mount |
Product Description
Factory
Mfr. #:
BSC070N10NS3 G
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 6.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 55 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 114 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 3
Packaging: Reel
Packaging: Cut Tape
Packaging: kxxReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 8 ns
Forward Transconductance - Min: 36 S
Height: 1.27 mm
Length: 5.9 mm
Product Type: MOSFET
Rise Time: 10 ns
factory pack quantiy: 5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 15 ns
Width: 5.15 mm
Part # Aliases: SP000778082 BSC7N1NS3GXT BSC070N10NS3GATMA1
Unit Weight: 0.003527 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- AddressFutian, Shenzhen, Guangdong
Product Categories
New Products
-
BZX384-C3V6,115 Nexperia Zener Diodes BZX384-C3V6/SOD323-2
-
CD4051BPWR Texas Instruments Multiplexer Switch ICs 8-Channel Analog
-
CS5464-ISZ Cirrus Logic Current & Power Monitors & Regulators 3-Ch Single Phase Power/Energy IC
-
CJ3407 SOT-23 Plastic-Encapsulate MOSFETS JSCJ P-Channel Enhancement Mode Field Effect Transistor
-
CRB1.0M Ceramic Resonator 1.20MHz LGE
-
CSCA0300A000B15B01 Honeywell Industrial Current Sensors CURRENT SENSORS
-
CUS10S30,H3F Toshiba Schottky Diodes & Rectifiers Single High-speed switching
-
DE2E3KY102MN2AM01F Murata Electronics Safety Capacitors PLEASE SEE MURATA'S SUGGESTED ALTERNATE DE2E3SA102MN2AT01F
-
DF01S-T Diodes Incorporated Bridge Rectifiers 100V 1A
-
E0505S-1WR3 Mornsun SIP
-
EA2-12NU KEMET Low Signal Relays - PCB 12V 1A Non Latching 2 Form C DPDT
-
IRF5305SPBF Infineon Technologies MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC
-
FGA40N65SMD onsemi / Fairchild IGBT Transistors 650V, 40A Field Stop IGBT
-
FHT100-30F Radial Leaded PTC Resettable Fuse : FHT Series Fuzetec
-
IRFR120NTRPBF Infineon Technologies MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC
-
GBPC2508W onsemi / Fairchild Bridge Rectifiers 25A Bridge Rectifier
-
GN3401 P-Channel Enhancement-Mode MOSFET (-30V, -4.2A) Gem micro semiconductor Inc.
-
HF32FV-G 12-HSTF Hongfa 10a 4kv Subminiature medium power relay
-
HFD4/5-S HONGFA Subminiature signal relay 2.5kv 1a 30vdc
-
HFKP/0121H6T Hongfa Automotive Relay
-
HK4101F-DC12V-SHG HONGFA 6VDC； 250VAC 3A
-
HR911105A Single Port RJ45 Connector with Integrated Magnetics and LED for 10/100Base-T NIC Applications
-
IP4220CZ6,125 Nexperia ESD Suppressors / TVS Diodes IP4220CZ6/SOT457/SC-74
-
IRF740APBF Vishay Semiconductors MOSFET 400V N-CH HEXFET
Popular Searches
- power transistor
- transistor
- Transistors
- N Channel Transistor
- Igbt Transistor
- N Channel Mosfet Transistor
- Pnp Transistor
- Smd Transistor
- Power Amplifier Transistor
- Electronic Components And Mosfet
- Switching Power Thyristor
- npn transistors
- Electronic Component Mosfet Transistor
- tube triode
- triode
- Ceramic Electron Tube
- Ceramic Vacuum Tube
- general purpose transistor
- N Channel Transistor Mosfet
- silicone amplifier
- high voltage transistor
- switching transistor
- Power Transistor Mosfet
- chip transistor
- rf tube
- oscillation tube
- Triode Tube
- Power Triode Tube
- toshiba electron tube
- amplifier tube
Recommended Products
- SIC module KHS03RS12B7P1
- Transformer
- NCE N-Channel Super Trench II Power MOSFET NCEP035N85GU
- NCE 1200V, 100A, Trench FS II Fast IGBT NCE100TD120VTP
- NCE N-Channel Enhancement Mode Power MOSFET NCE40H29D
- NCE N-Channel Super Trench Power MOSFET NCEP01ND35AG
- NCE N-Channel Super Trench Power MOSFET NCEP025F90T
- NCE N-Channel Super Trench Power MOSFET NCEP85T16
- NCE N-Channel Super Trench II Power MOSFET NCEP026N10
- NCE P-Channel Enhancement Mode Power MOSFET NCE2301E
- NCE P-Channel Enhancement Mode Power MOSFET NCE2301D
- NCE P-Channel Enhancement Mode Power MOSFET NCE2301C
Find Similar Products By Category
- Electrical & Electronics > Electronic Tube & Transistor > Triode
Product Tags:
Shenzhen Kexinxin Technology Co., Ltd.
Business license
- Please Enter your Email Address
- Please enter the content for your inquiry.
We will find the most reliable suppliers for you according to your description.
Send Now-
Aaron Lin
Welcome to my shop, I'm glad to serve you. Please feel free to send me any questions you may have.
Your message has exceeded the limit.
- Contact supplier for lowest price
- Customized Request
- Request Sample
- Request Free Catalogs
Your message has exceeded the limit.
-
Purchase Quantity
-
*Sourcing Details
Your inquiry content must be between 10 to 5000 characters.
-
*Email
Please enter Your valid email address.
-
Mobile