- Shenzhen Kexinxin Technology Co., Ltd.
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Shenzhen, Guangdong, China
- Main products: Integrated Circuits, Tantalum Capacitor, Mosfet, Crystal, Diodes
Home > Products > MOSFET > IRFR120NTRPBF Infineon Technologies MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC
IRFR120NTRPBF Infineon Technologies MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC
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Product Details
| Brand Name | Infineon Technologies | Place of Origin | China | |
| Model Number | IRFR120NTRPBF | Type | Other, MOSFET | |
| Package Type | Surface Mount |
Product Description
Factory
Mfr. #:
IRFR120NTRPBF
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 9.4 A
Rds On - Drain-Source Resistance: 210 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 25 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 23 ns
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 23 ns
factory pack quantiy: 2000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 4.5 ns
Width: 6.22 mm
Unit Weight: 0.011640 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- AddressFutian, Shenzhen, Guangdong
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