SI2308BDS-T1-GE3 Vishay Semiconductors MOSFET 60V Vds 20V Vgs SOT-23
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Product Details
Brand Name | Vishay Semiconductors | Place of Origin | China | |
Model Number | SI2308BDS-T1-GE3 | Type | Other, MOSFET | |
Package Type | Surface Mount |
Product Description
Factory
SI2308BDS-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 2.3 A
Rds On - Drain-Source Resistance: 156 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 2.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.66 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 7 ns
Product Type: MOSFET
Rise Time: 10 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 4 ns
Part # Aliases: SI2308BDS-T1-BE3 SI2308BDS-GE3
Unit Weight: 0.000282 oz
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- Shenzhen Kexinxin Technology Co., Ltd.
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- AddressFutian, Shenzhen, Guangdong
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