- Shenzhen Kexinxin Technology Co., Ltd.
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Shenzhen, Guangdong, China
- Main products: Integrated Circuits, Tantalum Capacitor, Mosfet, Crystal, Diodes
Home > Products > Bipolar Transistors BJT > MJE172G onsemi Bipolar Transistors - BJT 3A 80V 12.5W PNP
MJE172G onsemi Bipolar Transistors - BJT 3A 80V 12.5W PNP
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Product Details
| Brand Name | MJE172G | Place of Origin | China | |
| Model Number | Bipolar Transistors - BJT 3A 80V 12.5W PNP | Type | Bipolar Junction Transistor | |
| Package Type | Throught Hole |
Product Description
Factory
Mfr. #:
MJE172G
Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
RoHS: Details
Mounting Style: Through Hole
Package / Case: TO-225-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 80 V
Collector- Base Voltage VCBO: 100 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1.7 V
Maximum DC Collector Current: 3 A
Pd - Power Dissipation: 12.5 W
Gain Bandwidth Product fT: 50 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: MJE172
Packaging: Bulk
Brand: onsemi
Continuous Collector Current: 3 A
DC Collector/Base Gain hfe Min: 50
Height: 11.04 mm
Length: 7.74 mm
Product Type: BJTs - Bipolar Transistors
factory pack quantiy: 500
Subcategory: Transistors
Technology: Si
Width: 2.66 mm
Unit Weight: 0.023986 oz
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- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- AddressFutian, Shenzhen, Guangdong
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