- Shenzhen Kexinxin Technology Co., Ltd.
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Shenzhen, Guangdong, China
- Main products: Integrated Circuits, Tantalum Capacitor, Mosfet, Crystal, Diodes
SI2306BDS-T1-GE3 Vishay / Siliconix MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
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Product Details
| Brand Name | Vishay / Siliconix | Place of Origin | China | |
| Model Number | SI2306BDS-T1-GE3 | Type | Other, MOSFET | |
| Package Type | Surface Mount |
Product Description
Factory
Mfr. #:
SI2306BDS-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 3.16 A
Rds On - Drain-Source Resistance: 47 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 750 mW
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 6 ns
Product Type: MOSFET
Rise Time: 12 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 7 ns
Part # Aliases: SI2306BDS-T1-BE3 SI2306BDS-GE3
Unit Weight: 0.000282 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- AddressFutian, Shenzhen, Guangdong
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