Home > Products > Other Electronic Components > New and original SOT-23 Plastic-Encapsulate Transistors MMBT3904
New and original SOT-23 Plastic-Encapsulate Transistors MMBT3904
- T/T L/C
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Product Details
Brand Name | MMBT3904 | Place of Origin | China | |
Model Number | MMBT3904 | Type | Other |
Product Description
MMBT3904
JIANGSU CHANGJING ELECTRONICS
SOT-23 Plastic-Encapsulate Transistors
FEATURES
z Complementary to MMBT3906
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1AM= Device code
Solid dot = Green molding compound device,
if none, the normal device.
x=code
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 40V
Emitter-Base Voltage: 6V
Collector Current: 200MA
Collector Power Dissipation : 200MW
Thermal Resistance From Junction To Ambient: 625℃/W
Operation Junction and Storage Temperature Range: -55~+150℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Collector-base breakdown voltage: 60V
Collector-emitter breakdown voltage : 40V
Emitter-base breakdown voltage : 6V
Collector cut-off current: 50NA
Collector cut-off current: 100NA
Emitter cut-off current: 100NA
DC current gain
VCE=1V, IC=10mA : MIN. 100 MAX.300
VCE=1V, IC=50mA: 60
VCE=1V, IC=100mA: 30
Collector-emitter saturation voltage : 0.3V
Base-emitter saturation voltage: 0.95V
Transition frequency : 300 MHZ
Delay time: 35NS
Rise time: 35NS
Storage time : 200NS
Fall time: 50NS
CLASSIFICATION OF hFE(1)
RANK L RANGE: 100-200
RANK H RANGE: 200-300
Factory Pack Quantity: 3000
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