5SHX08F4502 IGCT module silicon controlled 3BHB003387R0101

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Xiamen Xiongba Electronic Commerce Co. LTD

FROM：Mr. Wei

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TEL/WeChat:15396237607

Thyristor IGCT

IGCT thyristor is a new type of controllable semiconductor device with low loss and high power density. At present, IGCT devices are widely used in information communication, power electronics, automotive electronics and other fields. Different from traditional SCR, IGCT devices do not use transistors and integrated circuits for voltage regulation, but use piezoelectric resistance formed by silicon wafers to control the current output of the device. Its output voltage varies from -0.5V to 1A, while ordinary SCR can only fluctuate between 0.03 and 0.1A. At high frequency, the controllability is up to 100%(compared with the transistor), and the power consumption can be reduced by 80%. IGTCT products are easy to design and can be used in high-pressure environments.

I. Product introduction

IGCT device is a kind of device that can be used in high voltage field. Its characteristic is that IGCT can drive with a weak current about 20% higher than the normal threshold current at the same current. Under the drive of IGCT device, the conductive characteristics of silicon material can be changed, and thus the transistor characteristics can be changed, and thus the output voltage can be changed. At present, IGCT has been widely used in computer, semiconductor equipment, consumer electronics, new energy power generation, aerospace and other fields. Compared with the conventional transistor, IGCT has a device loss of ± 0.5μA and a power consumption of only 0.1W. The performance of the ordinary transistor at high frequency is only about half of the rated value, about 0.02W-0.03W; And it is a replaceable structure with high application potential. At the same time, compared with the ordinary transistor, IGCT device also has low noise, high power density, high temperature stability and other characteristics

Second, product features

Using piezoelectric silicon technology, can increase the output voltage, thus increasing the switching frequency. It has the advantages of high switching loss, low saturation resistance, low level loss, high impedance characteristics and high voltage insulation characteristics. IGCT, on the other hand, uses piezoelectric silicon-based technology with A loss of about 0.03 to 0.1 A. In addition, IGCT has a variety of input voltage regulation modes, namely high voltage switching mode (TVS), low voltage switching mode (TLT) and low voltage switching mode (FSW).

Third, product advantages

IGCT power devices have the advantages of small size, light weight, high voltage resistance and high switching frequency. IGCT devices use high-quality silicon wafers, are more sophisticated and cheaper to manufacture, and, at 100 V/50 A power supply, can achieve 100 W, which is equivalent to a 5 kW battery charge for daily work. In addition, when there are many inductors in the system, IGCT products will also generate a lot of power consumption, which is incomparable to ordinary SCR. After the use of IgX-630R series IGCT/MOSFET, the series of products can be used between -15~45℃; And its use of high temperature semiconductor material characteristics, so that its pressure value reached more than 400 V, high temperature resistance up to 700℃-900℃.

Four, main technical parameters

Due to the good resistivity of the IGCT device, the voltage of the device can be regulated to a very high range under normal conditions. The device can be made to achieve higher efficiency, so that a higher voltage can be used. IGCT can provide a larger load than other SCR devices because it can provide a larger output current. In some applications, the adjustable silicon IGCT has good power efficiency (greater than 80%) and lower overload current (less than 1 A) than conventional SCR. According to its control performance, we define an IGCT device as one that achieves IGS1 and IGS2 output current regulation at a voltage of no more than 50 V (20 kHz).

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