- Beijing Rofea Optoelectronics Co, Ltd
-
Beijing, China
- Main products: intensity modulator, phase modulator, EDFA, Optical amplifier, Photodetector, laser source, Electro-optic modulator, Laser Module, DFB laser, SLD laser, ASE laser, Balanced photodetector
Home > Products > intensity modulator > R-AM-08-10G Wavalength 850nm 10GHz Intensity modulator
R-AM-08-10G Wavalength 850nm 10GHz Intensity modulator
- 1000 Piece / Pieces per Month
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Product Details
| Brand Name | Rofea |
Product Description
Product description:
ROF-AM 850nm lithium niobate optical intensity modulator uses an advanced proton exchange process, which has low insertion loss, high modulation bandwidth, low half-wave voltage, and other characteristics, mainly being used for space optical communication system, the cesium atomic time base, pulse generating devices, quantum optics, and other fields.
Uses advanced proton exchange process, which has low insertion loss, high modulation bandwidth, low half-wave voltage, and other characteristics, mainly used for space optical communication system, the cesium atomic time base, pulse generating devices, quantum optics, and other fields.
Feature:
? Low insertion loss
? Low half-voltage
? High stability
Application:
? Space optical communication system
? Cesium atomic time base
? Pulse generator
? Quantum Optics
Performance parameters:
Parameter | Symbol | Min | Typ | Max | Unit | ||||
Optical parameters | |||||||||
Operating wavelength | l | 830 | 850 | 870 | nm | ||||
Insertion loss | IL | 4.5 | 5 | dB | |||||
Optical return loss | ORL | -45 | dB | ||||||
Switch extinction ratio @DC | ER@DC | 20 | dB | ||||||
Dynamic extinction ratio | DER | 13 | dB | ||||||
Optical fiber | Input port | 850nm PM fiber(125/250μm) | |||||||
output port | 850nm PM fiber(125/250μm) | ||||||||
Optical fiber interface | FC/PC、FC/APC Or Customization | ||||||||
Electrical parameters | |||||||||
Operating bandwidth （-3dB） | S21 | 10 | 12 | GHz | |||||
Half-wave voltage Vpi | RF | @1KHz | 2.5 | 3 | V | ||||
Bias | @1KHz | 3 | 4 | V | |||||
Electrical return loss | S11 | -12 | -10 | dB | |||||
Input impedance | RF | ZRF | 50 | W | |||||
Bias | ZBIAS | 1M | W | ||||||
Electrical interface | SMA(f) | ||||||||
Limit Conditions
Parameter | Symbol | Unit | Min | Typ | Max |
Input optical power@850nm | Pin,Max | dBm | 10 | ||
Input RF power | dBm | 28 | |||
bias voltage | Vbias | V | -15 | 15 | |
Operating temperature | Top | ℃ | -10 | 60 | |
Storage temperature | Tst | ℃ | -40 | 85 | |
Humidity | RH | % | 5 | 90 |
Characteristic curve
ordering information:
ROF | AM | 08 | XX | XX | XX |
Modulator type ： AM---intensity modulator | Operating wavelength ： 08---850nm | Operating bandwidth ： 2.5G---2.5GHz 8G---8GHz 10G---10GHz | Input/output optical fiber ： PP---PM/PM | Connector ： FA---FC/APC FP---FC/PC SP---user specified |
please contact me if you have special requirement
Contact Us
- Beijing Rofea Optoelectronics Co, Ltd
- Contact nameVicky Xiang Chat Now
- Phone86-180-74907284
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