GAL16V8D 250 MHz CMOS Technology IC Electronic Components LATTICE for DMA Control

Features
? HIGH PERFORMANCE E2CMOS? TECHNOLOGY
— 3.5 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.0 ns Maximum from Clock Input to Data Output
— UltraMOS? Advanced CMOS Technology
? 50% to 75% REDUCTION IN POWER FROM BIPOLAR
— 75mA Typ Icc on Low Power Device
— 45mA Typ Icc on Quarter Power Device
? ACTIVE PULL-UPS ON ALL PINS
? E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
? EIGHT OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
— Also Emulates 20-pin PAL? Devices with Full
Function/Fuse Map/Parametric Compatibility
? PRELOAD AND POWER-ON RESET OF ALL REGISTERS
— 100% Functional Testability
? APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
? ELECTRONIC SIGNATURE FOR IDENTIFICATION
Description
The GAL16V8, at 3.5 ns maximum propagation delay time, combines
a high performance CMOS process with Electrically Erasable
(E2) floating gate technology to provide the highest speed
performance available in the PLD market. High speed erase times
(<100ms) allow the devices to be reprogrammed quickly and efficiently.
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user. An important subset of the many architecture configurations
possible with the GAL16V8 are the PAL architectures listed
in the table of the macrocell description section. GAL16V8 devices
are capable of emulating any of these PAL architectures with full
function/fuse map/parametric compatibility.
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice
Semiconductor delivers 100% field programmability and functionality
of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.

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