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MJ21196G NPN Transistors 250V TO-3
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Product Details
| Place of Origin | Jiangsu, China | Brand Name | HC | |
| Model Number | MJ21196G | Type | Bipolar Junction Transistor | |
| Package Type | Throught Hole |
Product Description
Features:
-Power Amplifier Applications
-Complementary to MJ21196G
-High collector voltage: VCEO=250V (min)
- High SOA:3A , 80V , 1Sec
- 250 WATTS
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Absolute Maximum Ratings(Tc=25℃):
Electrical Characteristics Tc=(25℃ ）:
Thunder Microeletronics was establised in 1995, specialized in power semiconductor parts production for over 20 years. Factory Area is over 7000m², incluse 1000m² purification workshop (10T grade) . Our main products are Schottky Diodes, Fast and Ultra Fast Recovery Diode, Mosfet (Field-Effort diode), Transistors, Rectfider Bridges and Power Management IC. We have own product deveopment and applicatioon team, fully support your requirements.
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Delivery
Contact Us
- Wuxi Thunder Microelectronics Co., Ltd.
- Contact nameLana Shen Chat Now
- Phone0086-510-85169977-8037
- AddressG2 200 Linghu Road, New District, Wuxi, Wuxi, Jiangsu
Product Categories
| Bipolar junction transistor | Fast Recovery Diode | Field-Effect Transistor | New Products |
| Power Management IC | Schottky Diode |
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