High power silicon controlled thyristor 1600V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

  1900

A

Sinewave,180^o conduction,T_c=65^oC

RMS value of on-state current

I_TRMS

  3100

A

Nominal value

Peak one cpstcle surge

(non repetitive) current

I_TSM

54000

46000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

14x10⁶

A²s

8.3 msec

Latching current

I_L

    500

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

     500

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

     1.25

V

I_TM = 3000 A;

Critical rate of rise of on-state

current (5, 6)

di/dt

      300

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

      150

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

20

A

Gate current required to trigger all units

I_GT

300

200

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.30

5

4

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

20

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

    2.0

ms

I_TM = 50 A; V_D = 67% V_DRM

Gate pulse: V_G = 30 V; R_G = 10 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

     250

ms

I_TM > 2000 A; di/dt = 10 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM ;

T_j = 125 ^oC; Duty cpstcle ³ 0.01%

Reverse recovery current

I_rr

      120

A

I_TM > 2000 A; di/dt = 10 A/ms;

V_R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

0.017

^oC/W

Double sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

0.003

^oC/W

Double sided cooled *

Mounting force

P

 8000

 35.5

10000

44.4

lb.

kN

Weight

W

  2.1

953

Lb.

g.