Home > Products > Ceramics Electron Tube (5-350KW) > ISO9000 toshiba transistors E3130 toshiba electron tube
ISO9000 toshiba transistors E3130 toshiba electron tube
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Product Details
| Place of Origin | Liaoning, China | Brand Name | HUAGUANG | |
| Model Number | TOSHIBA E3130 | Type | Triode Transistor | |
| Package Type | Surface Mount |
Product Description
E3130 toshiba transistors
Electrical parameters
Filament voltage: 12.6V
Filament current: 45A
Maximum instantaneous filament current: 67 A
Magnification factor: 21
Transconductance: 17mA / V
Electrode capacitance:
Anode - the grid: 15pF
Cathode - the grid: 20pF
Anode - Cathode: 0.7pF
Mechanical properties:
Quality: (approximately) 2.8Kg
Installation: vertical anode down
Cooling mode: anode forced air
Minimum air flow: 8m3/min
Minimum static pressure: 55mm water column
Heat sink the maximum operating temperature: 250 °C
Sealing at the highest temperature: 250 °C
The inlet air temperature: 45 °C
Maximum ratings
The maximum anode DC voltage: 8KV
Maximum negative grid DC voltage:-1500V
Maximum anode DC current: 2.5A
Maximum grid DC current: 550mA
Maximum anode dissipation power: 6KW
Maximum grid power dissipation: 200W
in typical operation: Class C Telegraph
Filament voltage: 12.6V
Anode DC voltage: 8KV
Anode DC current: 2.3A
Grid DC current: 390mA
Grid impedance: 3.5KΩ
Anode output power: 13KW
Contact Us
- Jinzhou Huaguang Electron Tube Co., Ltd.
- Contact nameJun Hu Chat Now
- Phone86-416-4144396
- AddressNo. 2, Section 2, Chongqing Rd., Guta District,Jinzhou,Liaoning Piov.,China, Jinzhou, Liaoning
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| Audio vacuum Electron Tube | Ceramic Surge Arrester | Ceramics Electron Tube (2.5-35KW) | Ceramics Electron Tube (5-350KW) |
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